Soi substrate and related methods

ABSTRACT

Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.

BACKGROUND 1. Technical Field

Aspects of this document relate generally to semiconductor substrates.More specific implementations involve silicon-on-insulator (SOI)substrates.

2. Background

Silicon-on-insulator (SOI) substrates include a silicon junction abovean electrical insulator. SOI substrates have been used to reducecapacitance.

SUMMARY

Implementations of a silicon-on-insulator (SOI) die may include asilicon layer including a first side and a second side, and aninsulative layer coupled directly to the second side of the siliconlayer. The insulative layer may not be coupled to any other siliconlayer.

Implementations of an SOI die may include one, all, or any of thefollowing:

The SOI die may include a plurality of semiconductor devices on thefirst side of the silicon layer.

The SOI die may include a conductive layer coupled directly to thesecond side of the silicon layer.

The silicon layer may be less than 35 micrometers (um) thick.

The insulative layer may include a thermally conductive material.

Implementations of methods of making an SOI die may include forming aring around the perimeter of a second side of a silicon substratethrough backgrinding the second side of the substrate to a desiredsubstrate thickness, depositing an insulative layer onto the second sideof the silicon substrate after backgrinding, removing the ring aroundthe perimeter of the second side of the silicon substrate, andsingulating the silicon substrate into a plurality of SOI die.

Implementations of methods of making an SOI die may include one, all, orany of the following:

The method may include forming a plurality of semiconductor devices onthe first side of the silicon substrate, the first side opposite thesecond side of the silicon substrate.

The plurality of silicon die may be less than 35 um thick.

The method may further include stress relief etching the second side ofthe silicon substrate.

The insulative layer may be deposited using either co-evaporation orco-sputtering.

The method may further include dissipating heat through a heatdissipation device during deposition of the insulative layer.

The co-evaporation or co-sputtering may occur at temperatures that donot require heat dissipation.

The method may not include implanting hydrogen.

No sacrificial carrier substrate may be used in the method.

Implementations of methods of making an SOI die may include forming aring around the perimeter of a second side of a silicon substratethrough backgrinding the second side of the silicon substrate to adesired substrate thickness, depositing a conductive layer onto thesecond side of the silicon substrate, depositing an insulative layerover the conductive layer, removing the ring around the perimeter of thesecond side of the silicon substrate, and singulating the siliconsubstrate into a plurality of SOI die.

Implementations of methods of making an SOI die may include one, all, orany of the following:

The method may further include patterning the conductive layer.

The conductive layer may include titanium.

The silicon substrate may be thinned to less than 35 um.

The insulative layer may be deposited using either co-evaporation orco-sputtering.

Implementations of a silicon-on-insulator (SOI) die may only include asilicon layer including a first side and a second side, a semiconductordevice coupled to the first side of the silicon layer, and an insulativelayer coupled directly to the second side of the silicon layer. Theinsulative layer may not be coupled to any other silicon layer.

The foregoing and other aspects, features, and advantages will beapparent to those artisans of ordinary skill in the art from theDESCRIPTION and DRAWINGS, and from the CLAIMS.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations will hereinafter be described in conjunction with theappended drawings, where like designations denote like elements, and:

FIG. 1 is a cross sectional side view of a silicon-on-insulator (SOI)die;

FIG. 2 is a cross sectional side view of an SOI substrate with a ringformed around the perimeter thereof;

FIGS. 3A-3J are cross sectional side views of an implementation of amethod of forming an SOI die; and

FIGS. 4A-4E are cross sectional side views of a second implementation ofa method of forming an SOI die.

DESCRIPTION

This disclosure, its aspects and implementations, are not limited to thespecific components, assembly procedures or method elements disclosedherein. Many additional components, assembly procedures and/or methodelements known in the art consistent with the intendedsilicon-on-insulator (SOI) substrates and die will become apparent foruse with particular implementations from this disclosure. Accordingly,for example, although particular implementations are disclosed, suchimplementations and implementing components may comprise any shape,size, style, type, model, version, measurement, concentration, material,quantity, method element, step, and/or the like as is known in the artfor such SOI substrates and die, and implementing components andmethods, consistent with the intended operation and methods.

Referring to FIG. 1, a cross sectional side view of an SOI die isillustrated. The SOI die 2 includes a silicon layer 4. The silicon layer4 includes a first side 6 and a second side 8 opposite the first side.In various implementations, the silicon layer 4 may be, by non-limitingexample, an epitaxial silicon layer, a polysilicon layer, a singlecrystal silicon layer, any combination thereof, or any othersilicon-containing layer material. In other implementations, it isunderstood that a layer other than a silicon-containing layer may beused, such as, by non-limiting example, gallium arsenide, siliconcarbide, or a metal-containing layer. While this disclosure primarilyrefers to silicon and SOI die, it is understood that the principlesdisclosed herein may be applied to other non-silicon containing die. Invarious implementations, one or more semiconductor devices may becoupled to the first side 6 of the silicon layer. In suchimplementations, the one or more semiconductor devices may include highvoltage junction devices or power management devices, while in otherimplementations the one or more semiconductor devices may include othertypes of semiconductor devices.

In various implementations, the silicon layer 4 may be less than 35micrometers (microns, um) thick. In other implementations, it may be 35or more um thick. In particular implementations, the silicon layer 4 maybe as thin as about 8 um thick. In implementations where the siliconlayer 4 is to be used in medium voltage applications [100 volts (V) or 2amps (A)], the silicon layer may be about 20-30 um thick. In otherimplementations where the silicon layer 4 is to be used in high voltageapplications (1 kV, 10 A), the silicon layer may be greater than 100 umthick.

The SOI die also includes an insulative layer 10 coupled to the secondside 8 of the layer 4. In various implementations, the insulative layer10 may be coupled directly to the second side 8 of the layer 4. Theinsulative layer may include any electrical insulator, and in particularimplementations, may include an electrical insulator which is thermallyconductive. In particular implementations, the insulative layer mayinclude, by non-limiting example, BN, AlN, AlO_(x), TiO_(x), TiN_(x),SiO₂, sapphire (alpha-Al₂O₃), Mica, Ta₂O₅, diamond, Si_(x)N_(y), SiC,GaN, graphene oxide, nanocomposite silicates, silicon rubber, a graphitepolymer matrix, tungsten carbide, any other electrically insulativematerial, or any combination thereof. In implementations where the SOIdie 2 is to be used in medium voltage applications [100 volts (V) or 2amps], the insulative layer may be about 2,000-5,000 Angstroms (A)thick. In other implementations where the SOI die 2 is to be used inhigh voltage applications (1 kV, 10 amps), the insulative layer may beabout 1 um thick. In other implementations, the insulative layer may beless than 2 kA thick or more than 1 um thick. In particularimplementations, the thickness of the insulative layer may be 3 um ormore thick.

In various implementations, and as illustrated by FIG. 1, the sidewallsof the insulative layer 10 may be a continuous layer coextensive withthe sidewalls 12 of the silicon layer 4. In other implementations, theinsulative layer 10 may be patterned. Though not illustrated by FIG. 1,in various implementations the SOI die 2 may include a conductive layerdirectly coupled to the second side 8 of the layer 4. In particularimplementations, the conductive layer may be between the layer 4 and theinsulative layer 10. In implementations where the insulative layer 10 ispatterned, the conductive layer may fill the recesses in the insulativelayer. The conductive layer may also be patterned. In implementationsincluding a conductive layer, the conductive layer may include titanium,aluminum, copper, gold, silver nickel, any other metal, any alloythereof, or any combination thereof.

In various implementations, the insulative layer 10 is not coupled toany other layer or silicon layer aside from the silicon layer 4. Whilevarious implementations of SOI die include a layer of silicon over aninsulative layer over a second layer of silicon (or at least a portionof a second layer of silicon), the implementations of the SOI diedisclosed herein may only include a single silicon layer. In suchimplementations, this may allow for the second side 14 of the insulativelayer 10 to be fully exposed. In particular implementations, the SOI diemay only include a silicon layer 4 having a first side 6 and a secondside 8 and an insulative layer 10 directly coupled to the second side 8of the silicon layer 4. The insulative layer 10 may be patterned invarious implementations. In other implementations, the SOI die may onlyinclude a silicon layer having a first side and a second side, asemiconductor device coupled to or formed on/in the first side of thesilicon layer, and an insulative layer coupled directly to the secondside of the silicon layer. In still other implementations, the SOI diemay only include a silicon layer having a first side and a second side,an insulative layer coupled to the second side of the silicon layer, anda conductive layer directly coupled to the second side of the siliconlayer as well as the insulative layer.

Referring to FIG. 2, a cross sectional side view of an SOI substratewith a ring formed around the perimeter thereof is illustrated. Invarious implementations, the substrate 16 illustrated by FIG. 2 may beformed prior to forming the SOI die 2 illustrated by FIG. 1. The SOIsubstrate 16 includes a substrate 18 having a first side 24 and a secondside 26. The substrate 18 may be, by non-limiting example, an epitaxialsilicon substrate, a polysilicon substrate, single crystal siliconsubstrate, any combination thereof, or any other silicon-containingsubstrate material. In other implementations, it is understood that asubstrate other than a silicon-containing substrate may be used, suchas, by non-limiting example, gallium arsenide, silicon carbide, or ametal-containing substrate. While this disclosure primarily refers tosilicon and SOI substrates, it is understood that the principlesdisclosed herein may be applied to other non-silicon containingsubstrates. As illustrated by FIG. 2, the substrate 18 includes athinned portion 20 and a ring 22 extending around the perimeter of thesubstrate. The ring may result from backgrinding in a process marketedunder the trade name TAIKO by DISCO of Tokyo, Japan. The thinned portion20 of the substrate 18 may be less than 35 micrometers (um) thick. Inother implementations, it may be 35 or more um thick. In particularimplementations, the thinned portion 20 of the substrate 18 may be asthin as about 8 um thick. In other particular implementations, thethinned portion 20 of the substrate may be about 20-30 um thick.

The SOI substrate 16 includes an insulative layer 28 coupled to thesecond side 26 of the substrate 18. In various implementations, theinsulative layer 28 may be coupled directly to the second side 26 of thesubstrate 18. The insulative layer may include any electrical insulator,and in particular implementations, may include an electrical insulatorwhich is thermally conductive. In particular implementations, theinsulative layer may include, by non-limiting example, BN, AlN, AlO_(x),TiO_(x), TiN_(x), SiO₂, sapphire (alpha-Al₂O₃), Mica, Ta₂O₅, diamond,Si_(x)N_(y), SiC, GaN, graphene oxide, nanocomposite silicates, siliconrubber, a graphite polymer matrix, tungsten carbide, any otherelectrically insulative material, or any combination thereof. In variousimplementations, the insulative layer 28 may be about 2,000-5,000Angstroms (A) thick. In other implementations, the insulative layer 28may be about 1 um thick. In still other implementations, the insulativelayer 28 may be less than 2 kA thick, more than 1 um thick, or between 2kA and 1 um thick. In particular implementations, the insulative layermay be 3 um or more than 3 um thick. In various implementations, and asillustrated by FIG. 2, the insulative layer 28 may be a solid andcontinuous layer covering the second side 26 of the substrate 18. Inother implementations, the insulative layer 28 may be patterned. Invarious implementations, the insulative layer 28 is not coupled to anyother substrate aside from the substrate 18.

In various implementations, the SOI substrate 16 may also include aconductive layer coupled to the insulative layer 28 and to the secondside 26 of the substrate 18 (not illustrated in FIG. 2). In variousimplementations, the conductive layer may be directly coupled to thesecond side 26 of the substrate 18. In particular implementations, theconductive layer may be between the substrate 18 and the insulativelayer 28. In implementations including a conductive layer, theconductive layer may any type of material previously disclosed hereinand may or may not be patterned.

Referring to FIGS. 3A-3J, cross sectional side views of a substrate atvarious points of a method for forming an SOI die is illustrated.Referring specifically to FIG. 3A, the method for forming an SOI die mayinclude forming a plurality of semiconductor devices 30 on, or couplinga plurality of semiconductor devices 30 to, a first side 34 of asubstrate 32. While FIGS. 3A-3J indicate that the plurality ofsemiconductor devices 30 are formed on the substrate 32 before thinningthe substrate and/or before applying an insulative layer, in otherimplementations, the plurality of semiconductor devices may be formed onthe substrate after thinning the substrate and/or after applying aninsulative layer to the substrate. The plurality of semiconductordevices may be any type of semiconductor device disclosed herein.

Referring to FIG. 3B, the method for forming an SOI die may includeapplying backgrind tape 38 to the first side 34 of the substrate 32.Referring to FIG. 3C, the method may also include initially thinning thesubstrate 42. In various implementations, the substrate may be initiallythinned to about 355 um, though in other implementations the substratemay be thinned to more or less than this thickness. The substrate 32 maybe thinned through backgrinding, etching, or any other thinningtechnique.

Referring to FIG. 3D, the method for forming an SOI die includes forminga ring 40 around the perimeter of a second side 36 of a substrate 32through backgrinding the second side of the substrate 32 to a desiredsubstrate thickness. In particular implementations, the backgrinding mayuse a process marketed under the trade name TAIKO by DISCO Corporationof Tokyo, Japan. The backgrinding leaves a ring of non-removed material(TAIKO ring) along the perimeter of the second side 36 of the substrate32 which helps to prevent the substrate from curling, warping orotherwise bending during further processing while at the same timeremoving most of the thickness and material of the second side 36 of thesubstrate 32. The ring 40 may also offer sufficient stress managementfor the insulative layer applied to the substrate as described laterherein. In other implementations of methods of forming semiconductordevices the TAIKO process may not be used, but another backgrinding orother material-removal technique may be used, such as removing thematerial through a wet etch. In various implementations, the thinnedportion 42 of the substrate 32 may be 50 um thick. In otherimplementations, it may be more or less than 50 um thick, including anydie or substrate thickness previously disclosed herein.

Referring to FIG. 3E, the method for forming an SOI die may includeetching the second side 36 of the substrate 32, or the thinned portion42. In particular implementations, the etching may be stress reliefetching. This stress relief etching may be used to obtain the finaldesired thickness of the wafer. The stress relief etching may includewet chemical etching. In other implementations, it may include dryetching or polishing instead of wet chemical etching, however, wetchemical etching may result in a cleaner substrate with less residualparticles. Acid may be used to etch the substrate, and in variousimplementations may include, by non-limiting example, hydrofluoric acid,acetic acid, nitric acid, and any other acid or combination thereof. Thewet chemical etch may be tightly monitored and controlled so that thetargeted thickness of the wafer is achieved. In various implementations,the second side 36 of the substrate 32 may be etched until the thinnedportion 42 of the substrate is 25 um thick. In other implementations,the substrate 32 may be etched until thinned portion 42 is more or lessthan 25 um thick. In implementations where the substrate is wet etched,the wet etch may prepare the substrate to better adhere to laterdeposited materials and/or devices. In various implementations, thebackgrind tape 38 may be removed.

Referring to FIG. 3F, the method for forming an SOI die includesdepositing an insulative layer 44 onto the second side 36 of thesubstrate 32 after backgrinding. In various implementations, theinsulative layer 44 may be deposited at a low temperature. The lowtemperature deposition may allow for the insulative layer to bedeposited without overheating the substrate, especially in instanceswhere the substrate has been thinned. The substrate 32 may have a lowthermal resistance. In various implementations, the insulative layer maybe deposited through spin-on techniques, chemical vapor deposition(CVD), sputtering, evaporation, co-sputtering, or co-evaporation, and inparticular implementations, may be deposited at a temperature that doesnot require heat dissipation. In implementations where the insulativelayer is deposited using either co-sputtering or co-evaporation, theoverall performance of the SOI die and the adhesion of the insulativelayer 44 to the substrate 32 may be improved. In variousimplementations, however, the method may include dissipating heatthrough a heat dissipation device during deposition of the insulativelayer 44. The heat dissipation device may include, among other devices,cooling chucks or common evaporators. The insulative layer 44 may be anyinsulative material previously disclosed herein, and may be applied inany thickness previously disclosed herein. In the implementationillustrated by FIG. 3F, the method includes depositing the insulativelayer 44 directly to the second side 36 of the substrate 32. In otherimplementations, the method may include directly depositing a conductivelayer to the second side of the substrate prior to deposition of theinsulative layer. The conductive layer may enhance the adhesion betweenthe insulative layer and the substrate as well as provide potentialelectrical contacts on the substrate. In such implementations, theconductive layer may include any electrically conductive materialdisclosed herein. In various implementations, the conductive layer maybe deposited through, by non-limiting example, sputtering, evaporation,electroplating, any other deposition technique, or any combinationthereof.

Referring to FIG. 3G, the method for forming an SOI die includesmounting the substrate 32 to a film frame. The first side 34 and/or theplurality of semiconductor devices 30 may be directly coupled to thefilm frame 46. Referring to FIG. 3H, the method may include removing thering 40. The ring may be removed through grinding the ring portion ofthe substrate. In other implementations, the ring may be removed throughplasma etching or cutting the ring from the remaining substrate using,by non-limiting example, a laser or a saw. In various implementations,the ring is removed to the extent that the backside 48 of the SOIsubstrate 50 opposite the side of the SOI substrate coupled to the filmframe is substantially level.

Referring to FIG. 3I, the method for forming an SOI die includesapplying a final dicing tape 52 to the backside 48 of the SOI substrate50, or to the insulative layer 44. In such implementations, the methodmay also include removing the exposed tape used to couple the substrate32 to the film frame explained in FIG. 3G. In other implementations,rather than applying the final dicing tape, the SOI substrate may beflipped so the insulative layer 44 is directly coupled to the existingtape.

Referring to FIG. 3J, the method for forming an SOI die may includesingulating the substrate 32 (and the SOI substrate 50) into a pluralityof SOI die 54. The SOI substrate may be singulated through, bynon-limiting example, a saw 56, a laser, plasma etching, or any othersingulation device or method. In various implementations, the SOI diemay be coupled to an interposer after singulation.

Referring to FIGS. 4A-4E, cross sectional side views of a secondimplementation of a method for forming an SOI die are illustrated.Referring specifically to FIG. 4A, the method may include patterning aninsulative layer 58 coupled to a second side 60 of a substrate 62. Asillustrated, the substrate 62 has been thinned to form a ring using anyof the thinning methods disclosed in this document. In suchimplementations, the method includes masking the insulative layer andremoving portions of the insulative layer where the mask pattern isabsent. The SOI substrate 64 may be the same as or similar to the SOIsubstrate illustrated in FIG. 3F with the exception that the insulativelayer 58 is patterned. The process used to produce the SOI substrateillustrated by and described in relation to FIG. 3F may also be used inmaking the SOI substrate with the patterned insulative layer illustratedin FIG. 4A.

In the implementation illustrated by FIG. 4A, the method includesdepositing the insulative layer 58 directly onto the second side 60 ofthe substrate 62. In other implementations, the method may includedirectly depositing a conductive layer onto the second side of thesubstrate prior to deposition of the insulative layer. The conductivelayer may enhance the adhesion between the insulative layer and thesubstrate as well as provide potential electrical contacts on thesubstrate. The conductive layer may be patterned. In still otherimplementations, the conductive layer may be deposited within recesses64 formed in the patterned insulative layer 58. The conductive layer mayalso cover all of or a portion of a second side 66 of the insulativelayer 58 opposite the first side 68 of the insulative layer. Theconductive layer may include any conductive material disclosed herein.In various implementations, the conductive layer may be depositedthrough, by non-limiting example, sputtering, evaporation,electroplating, any other deposition technique, or any combinationthereof.

Referring to FIG. 4B, implementations of a method for forming an SOI dieincludes mounting the substrate 62 to a film frame 70. The first side 72and/or the plurality of semiconductor devices 74 may be directly coupledto the film frame 70. Referring to FIG. 4C, the method may includeremoving the ring 76. The ring 76 may be removed through grinding thering portion of the substrate or any other method disclosed in thisdocument. In various implementations, the ring is removed to the extentthat the second side 78 of the substrate 62 on the ends 80 of thesubstrate are substantially level with the second side 66 of theinsulative layer 58.

Referring to FIG. 4D, the method for forming an SOI die may includeapplying a final dicing tape 82 to the second side 66 of the insulativelayer 58. In such implementations, the method may also include removingthe exposed tape used to couple the substrate 62 to the film frame 70 asexplained in relation to FIG. 4B. In other implementations, rather thanapplying the final dicing tape, the SOI substrate 84 may be flipped sothe insulative layer 58 is directly coupled to the existing tape.

Referring to FIG. 4E, the method for forming an SOI die includessingulating the substrate 62 (and the SOI substrate 84) into a pluralityof SOI die 86. The SOI substrate 84 may be singulated through, bynon-limiting example, a saw 88, a laser, plasma etching, or any othersingulation device or method. In various implementations, the SOI diemay be coupled to an interposer after singulation.

The implementations of SOI substrates and SOI die disclosed herein maybe formed without using a process that implants hydrogen within asubstrate, without forming bubbles within the substrate, withoutbreaking the substrate, and/or without having to polish the substrate.Further, the method may be performed without using a sacrificial carriersubstrate and without having to cut, grind, or otherwise remove thesacrificial carrier substrate. The methods of forming suchimplementations of SOI die may have sufficient stress management of thebackside insulating material to be able to form an SOI die without asacrificial carrier substrate while still having a thin silicon layercoupled to the insulative layer. In this way, no remaining carriermaterial may be present in the resulting SOI die.

In places where the description above refers to particularimplementations of SOI substrates/die implementing components,sub-components, methods and sub-methods, it should be readily apparentthat a number of modifications may be made without departing from thespirit thereof and that these implementations, implementing components,sub-components, methods and sub-methods may be applied to other SOIsubstrates/die.

1-5. (canceled)
 6. A method of making a silicon-on-insulator (SOI) die,the method comprising: forming a ring around a perimeter of a secondside of a silicon substrate through backgrinding the second side of thesilicon substrate to a desired substrate thickness; depositing aninsulative layer onto the second side of the silicon substrate afterbackgrinding; removing the ring around the perimeter of the second sideof the silicon substrate; and singulating the silicon substrate into aplurality of SOI die.
 7. The method of claim 6, further comprisingforming a plurality of semiconductor devices on the first side of thesilicon substrate, the first side opposite the second side of thesilicon substrate.
 8. The method of claim 6, wherein the plurality ofSOI die are less than 35 micrometers thick.
 9. The method of claim 6,further comprising stress relief etching the second side of the siliconsubstrate.
 10. The method of claim 6, wherein the insulative layer isdeposited using one of co-evaporation and co-sputtering.
 11. The methodof claim 10, further comprising dissipating heat through a heatdissipation device during deposition of the insulative layer.
 12. Themethod of claim 10, wherein the one of co-evaporation and co-sputteringoccur at temperatures that do not require heat dissipation.
 13. Themethod of claim 6, wherein the method does not comprise implantinghydrogen.
 14. The method of claim 6, wherein no sacrificial carriersubstrate is used to make the SOI die.
 15. A method of making asilicon-on-insulator (SOI) die, the method comprising: forming a ringaround a perimeter of a second side of a silicon substrate throughbackgrinding the second side of the silicon substrate to a desiredsubstrate thickness; depositing a conductive layer onto the second sideof the silicon substrate; depositing an insulative layer over theconductive layer; removing the ring around the perimeter of the secondside of the silicon substrate; and singulating the silicon substrateinto a plurality of SOI die.
 16. The method of claim 15, furthercomprising patterning the conductive layer.
 17. The method of claim 15,wherein the conductive layer comprises titanium.
 18. The method of claim15, wherein the silicon substrate is thinned to less than 35micrometers.
 19. The method of claim 15, wherein the insulative layer isdeposited using one of co-evaporation and co-sputtering.
 20. (canceled)